to-126 plastic-encapsulate transistors d882 transistor (npn) features power d issipation maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 40 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 6 v i c collector current -continuous 3 a p c collector power dissipation 1.25 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics ( t a =2 5 unless otherwise specified ) parameter symbol test conditions m in t yp max unit collector-base breakdown voltage v(br) cbo i c = 100 a, i e =0 40 v collector-emitter breakdown voltage v(br) ceo i c = 10ma, i b =0 30 v emitter-base breakdown voltage v(br) ebo i e = 100 a, i c =0 5 v collector cut-off current i cbo v cb = 40 v, i e =0 1 a collector cut-off current i ceo v ce = 30 v, i b =0 10 a emitter cut-off current i ebo v eb = 6 v, i c =0 1 a dc current gain h fe v ce = 2 v, i c = 1a 60 400 collector-emitter saturation voltage v ce (sat) i c = 2a, i b = 0.2 a 0.5 v base-emitter saturation voltage v be (sat) i c = 2a, i b = 0.2 a 1.5 v transition frequency f t v ce = 5v, i c =0.1a f =10mhz 90 mhz classification of h fe rank r o y gr range 60-120 100-200 160-320 200-400 to-126 1. emitter 2. collector 3. base 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,mar,2012
0 300 600 900 1200 1 10 100 1000 1 10 100 1000 100 1000 0 25 50 75 100 125 150 0 200 400 600 800 1000 1200 1400 1 10 100 1000 1 10 100 1000 1 10 100 1000 10 100 1000 0.1 1 10 10 100 0123456789 0.0 0.5 1.0 1.5 2.0 2.5 common emitter v ce = 2v v be i c ?? base-emmiter voltage v be (mv) collector current i c (ma) t a = 2 5 t a = 1 0 0 3000 =10 i c v besat ?? base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 3000 p c ?? t a ambient temperature t a ( ) collector power dissipation p c (mw) t a =100 t a =25 =10 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector curremt i c (ma) 3000 2000 d882 i c h fe ?? t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = 2v 3000 f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib ?? c ob c ib reverse voltage v (v) capacitance c (pf) 20 500 common emitter t a =25 10ma 9ma 8ma 7ma 6ma 5ma 4ma 3ma 2ma i b =1ma collector current i c (a) collector-emitter voltage v ce (v) i c ?? v ce 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,mar,2012
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